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NTD4857N Power MOSFET

NTD4857N Description

NTD4857N Power MOSFET 25 V, 78 A, Single N *Channel, DPAK/IPAK .

NTD4857N Features

* Trench Technology
* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Driver Losses
* Optimized Gate Charge to Minimize Switching Losses
* These are Pb

NTD4857N Applications

* VCORE Applications
* DC
* DC Converters
* Low Side Switching MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current RθJA (Note 1) VDSS

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Power MOSFET ON Semiconductor
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