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NTD4959N
Power MOSFET
30 V, 58 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • These are Pb−Free Devices
Applications
• CPU Power Delivery • DC−DC Converters • Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current (RqJA) (Note 1)
Power Dissipation (RqJA) (Note 1)
Continuous Drain Current (RqJA) (Note 2)
Power Dissipation (RqJA) (Note 2)
Continuous Drain Current (RqJC) (Note 1)
Steady State
TA = 25°C TA = 85°C TA = 25°C
TA = 25°C TA = 85°C TA = 25°C
TC = 25°C TC = 85°C
VDSS VGS ID
PD ID
PD ID
30
V
"20
V
11.5
A
9.0
2.0
W
9.
NTD4959N Datasheet
