NTD4960N - Power MOSFET

Features

Low RDS(on) to Minimize Conduction Losses.
Low Capacitance to Minimize Driver Losses.
Optimized Gate Charge to Minimize Switching Losses.
Three Package Variations for Design Flexibility.
These Devices are Pb.
Free, Halogen Free/BFR Free and are RoHS Compliant.

ON Semiconductor

Datasheet Details

Part number	NTD4960N
Manufacturer	ON Semiconductor
File Size	291.27 KB
Description	Power MOSFET
Datasheet	NTD4960N Datasheet
Additional preview pages of the NTD4960N datasheet.

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Full PDF Text Transcription

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NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK Features  Low RDS(on) to Minimize Conduction Losses  Low Capacitance to Minimize Driver Losses  Optimized Gate Charge to Minimize Switching Losses  Three Package Variations for Design Flexibility  These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications  CPU Power Delivery  DC−DC Converters  Recommended for High Side (Control) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 30 V VGS 20 V TA = 25C ID 11.1 A TA = 85C 8.

Published: Feb 7, 2010 |