NTD4960N Datasheet | onsemi

Power MOSFET 30 V, 55 A, Single N- Channel, DPAK/IPAK Features - Low RDS(on) to Minimize Conduction Losses - Low Capacitance to Minimize Driver Losses - Optimized Gate Charge to Minimize Switching Losses - Three Package Variations for Design Flexibility - These Devices are Pb- Free, Halogen Free/BFR Free and are RoHS pliant Applications - CPU Power Delivery - DC- DC Converters - Remended for High Side (Control) MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Parameter Symbol Value Unit Drain- to- Source Voltage Gate- to- Source Voltage Continuous Drain Current RqJA (Note 1) VDSS 20 TA = 25C TA = 85C Power Dissipation RqJA (Note...