NTD4960N Description
NTD4960N Power MOSFET 30 V, 55 A, Single N−Channel, DPAK/IPAK.
NTD4960N Key Features
- Low RDS(on) to Minimize Conduction Losses
- Low Capacitance to Minimize Driver Losses
- Optimized Gate Charge to Minimize Switching Losses
- Three Package Variations for Design Flexibility
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
NTD4960N Applications
- Steady State (Note 1) Junction−to−Ambient
- Steady State (Note 2) 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum remended pad size