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NTD4965N
MOSFET – Power, Single, N-Channel, DPAK/IPAK
30 V, 68 A
Features
• Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching Losses • Three Package Variations for Design Flexibility • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery • DC−DC Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RqJA (Note 1)
VDSS
30
V
VGS
±20
V
TA = 25°C
ID
17.8
A
TA = 100°C
12.6
Power Dissipation RqJA (Note 1)
TA = 25°C
PD
2.
NTD4965N Datasheet
