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NTD4979N Power MOSFET

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Description

NTD4979N Power MOSFET 30 V, 41 A, Single N *Channel, DPAK/IPAK .

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Features

* Low RDS(on) to Minimize Conduction Losses
* Low Capacitance to Minimize Driver Losses
* Optimized Gate Charge to Minimize Switching Losses
* Three Package Variations for Design Flexibility
* These Devices are Pb
* Free, Halogen Free/BFR Free and are Ro

Applications

* CPU Power Delivery
* DC
* DC Converters MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain
* to
* Source Voltage Gate
* to
* Source Voltage Continuous Drain Current RqJA (Note 1) TA = 25°C TA = 100°C VDSS VGS ID

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