Datasheet4U Logo Datasheet4U.com

NTD6415AN - N-Channel Power MOSFET

Features

  • Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb.
  • Free and are RoHS Compliant V(BR)DSS Value 100 $20 23 16 PD IDM TJ, Tstg IS EAS 83 89.
  • 55 to +175 23 79 W A °C G Unit V V A 100 V http://onsemi. com ID MAX (Note 1) 23 A.

📥 Download Datasheet

Datasheet preview – NTD6415AN

Datasheet Details

Part number NTD6415AN
Manufacturer ON Semiconductor
File Size 169.65 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NTD6415AN Datasheet
Additional preview pages of the NTD6415AN datasheet.

📁 Similar Datasheet

  • NTD60 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD60N02R - Power MOSFET (ON)
  • NTD08 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD10 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD106B - Thyristor/Diode Module (Naina Semiconductor)
  • NTD110N02R-001G - N-Channel MOSFET (VBsemi)
  • NTD12 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
  • NTD122C - Thyristor/Diode Module (Naina Semiconductor)
  • NTD132C - Thyristor/Diode Module (Naina Semiconductor)
  • NTD15 - HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS (EDI)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
NTD6415AN N-Channel Power MOSFET 100 V, 23 A, 55 mW Features • • • • Low RDS(on) High Current Capability 100% Avalanche Tested These Devices are Pb−Free and are RoHS Compliant V(BR)DSS Value 100 $20 23 16 PD IDM TJ, Tstg IS EAS 83 89 −55 to +175 23 79 W A °C G Unit V V A 100 V http://onsemi.
Published: |