NTD6415ANL
Features
- Low RDS(on)d
- 100% Avalanche Tested
- NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
- These Devices are Pb-Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25 C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
VDSS
Gate-to-Source Voltage
- Continuous
20
Continuous Drain
Steady TC = 25 C
Current
State
TC = 100 C
Power Dissipation
Steady TC = 25 C
State
Pulsed Drain Current tp = 10 ms
Operating and Storage Temperature Range
TJ, Tstg
- 55 to C +175
Source Current (Body Diode)
Single Pulse Drain-to-Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 23 A, L = 0.3 m H, RG = 25 W)
Lead Temperature for Soldering Purposes, 1/8- from Case for 10 Seconds
79 m...
