NTD6416AN
Features
- Low RDS(on)
- High Current Capability
- 100% Avalanche Tested
- HBM ESD Level Class 1B, MM ESD Level Class M2
- NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC- Q101 Qualified and PPAP Capable
- These Devices are Pb- Free and are Ro HS pliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain- to- Source Voltage
VDSS
Gate- to- Source Voltage
- Continuous
±20
Continuous Drain
Steady TC = 25°C
Current
State
TC = 100°C
Power Dissipation
Steady TC = 25°C
State
Pulsed Drain Current tp = 10 ms
Operating and Storage Temperature Range
TJ, Tstg
- 55 to °C +175
Source Current (Body Diode)
Single Pulse Drain- to- Source Avalanche Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) = 17 A, L = 0.3 m H, RG = 25 W)
Lead Temperature for Soldering Purposes, 1/8″ from Case for 10...
