NTGD1100L Datasheet (ON Semiconductor)

NTGD1100L, Power MOSFET

Pullup Resistor Optional Slew *Rate Control Output Capacitance Optional In *Rush Current Control Values Typical 10 kW to 1.0 MW Typical 0 to 100 kW Usually < 1.0 mF Typical ≤ 1000 pF www.onsemi.com 2 VDROP, (V) RDS(on), DRAIN *TO *SOURCE RESISTANCE (W) RDS(on), DRAIN<

MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and N Channel MOSFET in a single package.

This device is particularly suited for portable electronic equipment where low control signals, low battery voltages and high load currents are needed.

The P Channel device is specifically designed as a load switch using ON Semiconductor state of the art trench technology.

The N Channel, with

NTGD1100L Features

* Extremely Low RDS(on) Load Switch MOSFET

* Level Shift MOSFET is ESD Protected

* Low Profile, Small Footprint Package

* VIN Range 1.8 to 8.0 V

* ON/OFF Range 1.5 to 8.0 V

* ESD Rating of 2000 V

* These Devices are Pb

* Free and are RoHS