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NTGD3149C Power MOSFET

NTGD3149C Description

NTGD3149C Complementary, 20 V, +3.5/ *2.7 A, TSOP *6 Dual .

NTGD3149C Features

* Power MOSFET
* Complementary N
* Channel and P
* Channel MOSFET Small Size (3 x 3 mm) Dual TSOP
* 6 Package Leading Edge Trench Technology for Low On Resistance Reduced Gate Charge to Improve Switching Response Independen

NTGD3149C Applications

* 2.7 A
* DC
* DC Conversion Circuits
* Load/Power Switching with Level Shift MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain
* to
* Source Voltage Gate
* to
* Source Voltage N
* Channel Continuous Drain Current (Note 1)

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Power MOSFET ON Semiconductor
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