Part number:
NTGD3148N
Manufacturer:
File Size:
97.21 KB
Description:
Power mosfet.
* ăLow Threshold Levels, VGS(th) < 1.5 V
* ăLow Gate Charge (3.8 nC)
* ăLeading Edge Trench Technology of Low RDS(on)
* ăHigh Power and Current Handling Capability
* ăThis is a Pb-Free Device Applications http://onsemi.com N-CHANNEL MOSFET V(BR)DSS 20 V RDS(on) M
NTGD3148N Datasheet (97.21 KB)
NTGD3148N
97.21 KB
Power mosfet.
📁 Related Datasheet
NTGD3147F - Power MOSFET and Schottky Diode
(ON Semiconductor)
NTGD3147F Power MOSFET and Schottky Diode
Features
−20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6
• • • • • •
Fast Switching Low Gate C.
NTGD3149C - Power MOSFET
(ON Semiconductor)
NTGD3149C
Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual
Features
Power MOSFET
• • • • • •
Complementary N−Channel and P−Channel MOSFET Small Size (.
NTGD3133P - Power MOSFET
(ON Semiconductor)
..
NTGD3133P Power MOSFET
−20 V, −2.5 A, P−Channel, TSOP−6 Dual
Features
• • • • • • • • •
Reduced Gate Charge for Fast Switching .
NTGD1100L - Power MOSFET
(ON Semiconductor)
MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6
8 V, +3.3 A
NTGD1100L
The NTGD1100L integrates a P and N−Channel MOSFET in a single p.
NTGD4161P - Power MOSFET
(ON Semiconductor)
NTGD4161P Power MOSFET
−30 V, −2.3 A, Dual P−Channel, TSOP−6
Features
• • • • •
Fast Switching Speed Low Gate Charge Low RDS(on) Independently Conne.
NTGD4167C - Power MOSFET
(ON Semiconductor)
NTGD4167C
MOSFET – POWER, Dual, Complementary, TSOP-6
30 V, +2.9/-2.2 A
Features
• Complementary N−Channel and P−Channel MOSFET • Small Size (3 x 3 .
NTGD4169F - Power MOSFET and Schottky Diode
(ON Semiconductor)
NTGD4169F Power MOSFET and Schottky Diode
Features
30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6
• • • • • •
Fast Switching Low Gate Cha.
NTG - High Accuracy NTC Thermistors
(MCC)
..
MCC
Micro Commercial Components
TM
omponents 20736 Marilla Street Chatsworth # $.