NTGD3148N Datasheet - ON Semiconductor

NTGD3148N Power MOSFET

NTGD3148N Features

* ăLow Threshold Levels, VGS(th) < 1.5 V

* ăLow Gate Charge (3.8 nC)

* ăLeading Edge Trench Technology of Low RDS(on)

* ăHigh Power and Current Handling Capability

* ăThis is a Pb-Free Device Applications http://onsemi.com N-CHANNEL MOSFET V(BR)DSS 20 V RDS(on) M

Datasheet Details

NTGD3148N

97.21 KB

Power mosfet.

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