NTMD4102PR2 Datasheet - ON Semiconductor

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NTMD4102PR2 Trench Power MOSFET

NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge .

NTMD4102PR2-ONSemiconductor.pdf

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Datasheet Details

Part number:

NTMD4102PR2

Manufacturer:

ON Semiconductor ↗

File Size:

43.03 KB

Description:

Trench Power MOSFET

Features

* & Benefits
* Leading -20 V Trench for Low RDS(on)
* SO-8 Package Provides Excellent Thermal Performance
* Surface Mount SO-8 Package Saves Board Space

Applications

* Load/Power Management
* Battery Switching for Multi Cell Li-Ion
* Buck-Boost Synchronous Rectification MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C (Not

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NTMD4102PR2 Trench Power MOSFET ON Semiconductor

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