NTMD4102PR2 Trench Power MOSFET

ON Semiconductor

Description

NTMD4102PR2 Product Preview Trench Power MOSFET -20 V, P-Channel, SO-8 Dual This P-Channel device was designed using ON Semiconductor’s leading edge .

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NTMD4102PR2 Datasheet Preview — Preview of NTMD4102PR2 PDF

Datasheet Specifications

Part number: NTMD4102PR2
Manufacturer: ON Semiconductor ↗
File Size: 43.03 KB
Datasheet: NTMD4102PR2-ONSemiconductor.pdf
Description: Trench Power MOSFET

Features

* & Benefits
* Leading -20 V Trench for Low RDS(on)
* SO-8 Package Provides Excellent Thermal Performance
* Surface Mount SO-8 Package Saves Board Space

Applications

* Load/Power Management
* Battery Switching for Multi Cell Li-Ion
* Buck-Boost Synchronous Rectification MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Drain-to-Source Voltage Gate-to-Source Voltage Drain Current - Continuous @ TA = 25°C (Not

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NTMD4102PR2 Trench Power MOSFET ON Semiconductor

ON Semiconductor NTMD4102PR2-like datasheet