* Q1: N
* Channel
* Max rDS(on) = 25 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 61 mW at VGS = 6, ID = 3.9 A Q2: N
* Channel
* Max rDS(on) = 25 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 61 mW at VGS = 6, ID = 3.9 A
* Low Inductance Packaging Sho
NTTFD022N10C Datasheet (407.20 KB)
NTTFD022N10C
407.20 KB
N-channel mosfet.
DATA SHEET www.onsemi.com MOSFET - Single, N-Channel 100 V, 25 mW, 24 A NTTFD022N10C V(BR)DSS 100 V RDS(ON) MAX 25 mW @ 10 V 61 mW @ 6 V ID MAX 24.
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