NTTFD022N10C - N-Channel MOSFET

ON Semiconductor

NTTFD022N10C Datasheet Preview — Preview of NTTFD022N10C PDF

Datasheet Details

Part number	NTTFD022N10C
Manufacturer	ON Semiconductor ↗
File Size	407.20 KB
Description	N-Channel MOSFET
Datasheet	NTTFD022N10C-ONSemiconductor.pdf

NTTFD022N10C Product details

Description

This device includes two specialized N Channel MOSFETs in a dual package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.

Features

Q1: N.
Channel.
Max rDS(on) = 25 mW at VGS = 10 V, ID = 7.8 A.
Max rDS(on) = 61 mW at VGS = 6, ID = 3.9 A Q2: N.
Channel.
Max rDS(on) = 25 mW at VGS = 10 V, ID = 7.8 A.
Max rDS(on) = 61 mW at VGS = 6, ID = 3.9 A.
Low Inductance Packaging Shortens Rise/Fall Times, Resulting in Lower Switching Losses.
RoHS Compliant.

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Published: Sep 1, 2024 |