NTTFD9D0N06HL Datasheet - ON Semiconductor

N-Channel Power MOSFET

NTTFD9D0N06HL Features

* Q1: N

* Channel

* Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A

* Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A Q2: N

* Channel

* Max rDS(on) = 9.0 mW at VGS = 10 V, ID = 10 A

* Max rDS(on) = 13 mW at VGS = 4.5, ID = 8.0 A

* Low Inductance Packaging

NTTFD9D0N06HL General Description

This device includes two specialized N *Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Fe.

NTTFD9D0N06HL Datasheet (436.70 KB)