NTTFD021N08C Datasheet - ON Semiconductor

NTTFD021N08C N-Channel MOSFET

This device includes two specialized N *Channel MOSFETs in a dual package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency. Fe.

NTTFD021N08C Features

* Q1: N

* Channel

* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A

* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N

* Channel

* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A

* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A

* Low Inductance Packaging

NTTFD021N08C-ONSemiconductor.pdf