Datasheet Details
Part number:
NTTFD021N08C
Manufacturer:
File Size:
410.86 KB
Description:
N-Channel MOSFET
Features
* Q1: N
* Channel
* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A Q2: N
* Channel
* Max rDS(on) = 21 mW at VGS = 10 V, ID = 7.8 A
* Max rDS(on) = 55 mW at VGS = 6 V, ID = 3.9 A
* Low Inductance Packaging
NTTFD021N08C-ONSemiconductor.pdf
NTTFD021N08C, N-Channel MOSFET
This device includes two specialized N *Channel MOSFETs in a dual package.
The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.
The control MOSFET (Q2) and synchronous (Q1) have been designed to provide optimal power efficiency.
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NTTFD021N08C Distributor
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