NUS3116MT Main Switch Power MOSFET and Dual Charging BJT

ON Semiconductor

Description

NUS3116MT Main Switch Power MOSFET and Dual Charging BJT *12 V, *6.2 A, Single P *Channel with Dual PNP low Vce(sat) Transisto.

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Datasheet Specifications

Part number: NUS3116MT
Manufacturer: ON Semiconductor ↗
File Size: 194.43 KB
Datasheet: NUS3116MT_ONSemiconductor.p
Description: Main Switch Power MOSFET and Dual Charging BJT

Features

* High Performance Power MOSFET
* Dual
* Low Vce(sat) Transistors as Charging Power Mux
* 3.0x3.0x0.8 mm WDFN Package
* Independent Pin
* out Provides Circuit Flexibility
* Low Profile (

Applications

* Main Switch and Battery Charging Mux for Portable Electronics
* Optimized for Commercial PMUs from Top Suppliers (See Figure 2) 1 2 3 D 8 C 7 6 www. onsemi. com V(BR)DSS
* 12 V MOSFET RDS(on) TYP 32 mW @
* 4.5 V 44 mW @
* 2.5 V ID MAX
* 6.2 A Low Vc

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NUS3116MT Main Switch Power MOSFET and Dual Charging BJT ON Semiconductor

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