BJT Datasheet | Specifications & PDF Download

CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT FDMA1430JP Integrated P-Channel PowerTrench® MOSFET and BJT -30 V, -2.9 A, 90 mΩ July 20

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CI-MCP Specification 16GB eNAND (x8) + 16Gb LPDDR3 (x32) This document is a general product description and is subject to change without notice. SK h

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SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a

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SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE(sat) Switching Transistor DFN-8 This integrated device represents a ne

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SSC8PN0GN2 High Frequency High Gain PNP with NPN Power BJT  Features  Applications PNP BJT VCE -40V VBE -6V VCE(SAT) typ -150mV Ic -1A  ba

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ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE. Reprinted, with permission, from

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3N03BJT/D Preliminary Data Sheet Plastic Power Transistors SO–8 for Surface Mount

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMDJ3P03BJT/D Preliminary Data Sheet • High DC Current Gain — hFE = 140 (Min) @ IC = 1

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NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Pa

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www.DataSheet4U.com CS10 Series Ceramic Surface Mount Crystals Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature:

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PN8570 Chipown Internal BJT Low Standby-Power Quasi-Resonant Primary-side Converter General description The PN8570 consists of a Low Standby-Power

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