H9TQ17ABJTMCUR (Hynix Semiconductor)
16GB eNAND (x8) / LPDDR3 16Gb(x32)
CI-MCP Specification
16GB eNAND (x8) + 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK h
(268 views)
PN8570 (Chipown)
Internal BJT Low Standby-Power Quasi-Resonant Primary-side Converter
PN8570
Chipown
Internal BJT Low Standby-Power Quasi-Resonant Primary-side Converter
General description
The PN8570 consists of a Low Standby-Power
(78 views)
H9TQ17ABJTMCUR-KUM (Hynix Semiconductor)
16GB eNAND (x8) / LPDDR3 16Gb(x32)
CI-MCP Specification
16GB eNAND (x8) + 16Gb LPDDR3 (x32)
This document is a general product description and is subject to change without notice. SK h
(66 views)
MG50G1BL3 (Toshiba)
(MG50Gxxx) BJT POWER MODULE TRANSISTOR
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(43 views)
NUS3116MT (ON Semiconductor)
Main Switch Power MOSFET and Dual Charging BJT
NUS3116MT
Main Switch Power MOSFET and Dual Charging BJT
−12 V, −6.2 A, Single P−Channel with Dual PNP low Vce(sat) Transistors, 3x3 mm WDFN Package
(35 views)
MG50G2DL1 (Toshiba)
(MG50Gxxx) BJT POWER MODULE TRANSISTOR
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(30 views)
MG50G2xxx (Toshiba)
BJT and MOS-BJT Power Module
(29 views)
NSM3005NZ (ON Semiconductor)
Small Signal BJT/MOSFET
Small Signal BJT and MOSFET
30 V, 500 mA, PNP BJT with 20 V, 224 mA, N−Channel MOSFET
NSM3005NZ
Features
• These Devices are Pb−Free, Halogen Free/BF
(27 views)
CS10-14.7456MABJTR (Citizen)
Surface Mount Crystals
www.DataSheet4U.com
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature:
(25 views)
AN644 (Maxim Integrated Products)
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz
ASICs
Application Note 644: Mar 17, 2000
QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz
1998 IEEE. Reprinted, with permission, from
(24 views)
MG50G6EL1 (Toshiba)
(MG50Gxxx) BJT POWER MODULE TRANSISTOR
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(24 views)
BC140-25 (Crimson)
BJT Transistor
(23 views)
MG50G1JL1 (Toshiba)
(MG50Gxxx) BJT POWER MODULE TRANSISTOR
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(23 views)
NUS5531MT (ON Semiconductor)
Main Switch Power MOSFET and Single Charging BJT
NUS5531MT Main Switch Power MOSFET and Single Charging BJT
−12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce(sat) Transistor, 3x3 mm WDFN Pa
(23 views)
CS10-12.288MABJTR (Citizen)
Surface Mount Crystals
www.DataSheet4U.com
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature:
(23 views)
CS10-32.000MABJTR (Citizen)
Surface Mount Crystals
www.DataSheet4U.com
CS10 Series Ceramic Surface Mount Crystals
Specifications: • Frequency/Temperature: ±50ppm, -10°C ~ 60°C • Operating Temperature:
(23 views)
MBNP2074G6 (CYStech Electronics)
N-Channel Enhancement mode MOSFET AND PNP BJT Complex Device
CYStech Electronics Corp.
Spec. No. : C196G6 Issued Date : 2011.01.20 Revised Date : Page No. : 1/10
N- Channel Enhancement mode MOSFET AND PNP BJT
(21 views)
ET127 (Fuji Semiconductors)
Transistor - BJT and MOS-BJT Power Module
(21 views)
MG100G2JL1 (Toshiba)
TRANSISTOR BJT POWER MODULE
(21 views)
LH28F008BJT-BTLZC (Sharp Microelectronics)
Flash Memory 8M (1Mb x 8)
PRELIMINARY PRODUCT SPECIFICATION
www.DataSheet4U.com Integrated Circuits Group
LH28F008BJT-BTLZC
Flash Memory 8M (1Mb x 8)
(Model Number: LHF08JZC)
(21 views)
