AN644 - QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz
ASICs Application Note 644: Mar 17, 2000 QuickChip Design Example 2 Low Power Silicon BJT LNA for 1.9GHz 1998 IEEE.
Reprinted, with permission, from 1998 IEEE Microwave and Guided Wave Letters, Vol.
3, No.
3, pp.
136-137 Abstract A two-stage 1.9GHz monolithic low-noise amplifier (LNA) with a measured noise figure of 2.3dB and an associated gain of 15dB was fabricated in a standard silicon bipolar transistor array.
It dissipates 5.2mW from a 3V supply including the bias circuitry.
Input return
