NVC080N120SC1 - SiC MOSFET

ON Semiconductor

NVC080N120SC1 Datasheet Preview — Preview of NVC080N120SC1 PDF

Datasheet Details

Part number	NVC080N120SC1
Manufacturer	ON Semiconductor ↗
File Size	304.13 KB
Description	SiC MOSFET
Datasheet	NVC080N120SC1-ONSemiconductor.pdf

NVC080N120SC1 Product details

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge.Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.

Features

1200 V @ TJ = 175°C.
Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A.
High Speed Switching with Low Capacitance.
100% UIL Tested.
AEC.
Q101 Qualified and PPAP Capable.
This Device is Halide Free and RoHS Compliant with exemption 7a, Pb.
Free 2LI (on second level interconnection).

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Published: Aug 30, 2024 |