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NVC080N120SC1 SiC MOSFET

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Description

Silicon Carbide (SiC) MOSFET * 80 mohm, 1200 V, M1, Bare Die NVC080N120SC1 .
Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon.

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Features

* 1200 V @ TJ = 175°C
* Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A
* High Speed Switching with Low Capacitance
* 100% UIL Tested
* AEC
* Q101 Qualified and PPAP Capable
* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

Applications

* Automotive Traction Inverter
* Automotive DC
* DC Converter for EV/HEV DATA SHEET www. onsemi. com V(BR)DSS 1200 V RDS(on) MAX 110 mW @ 20 V ID MAX 31 A N
* CHANNEL MOSFET D G S DIE DIAGRAM G S1 S2 Die Information S Wafer Diameter S Die Size S Metallization ⋅ Top

NVC080N120SC1 Distributors

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