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NVC080N120SC1 Datasheet - ON Semiconductor

NVC080N120SC1 SiC MOSFET

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NVC080N120SC1 Features

* 1200 V @ TJ = 175°C

* Typ RDS(on) = 80 mW at VGS = 20 V, ID = 20 A

* High Speed Switching with Low Capacitance

* 100% UIL Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

NVC080N120SC1 Datasheet (304.13 KB)