NVC160N120SC1 Datasheet - ON Semiconductor

SiC MOSFET

NVC160N120SC1 Features

* 1200 V @ TJ = 175°C

* Typ RDS(on) = 160 mW at VGS = 20 V, ID = 10 A

* High Speed Switching with Low Capacitance

* 100% UIL Tested

* AEC

* Q101 Qualified and PPAP Capable

* This Device is Halide Free and RoHS Compliant with exemption 7a, Pb

NVC160N120SC1 General Description

Silicon Carbide (SiC) MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficie.

NVC160N120SC1 Datasheet (168.68 KB)