* 1200 V 40 mW SiC MOSFETs
* Low Reverse Recovery and Fast Switching SiC Diodes
* 1200 V Bypass and Anti
* parallel Diodes
* Low Inductive Layout
* Solderable Pins
* Thermistor
* This Device is Pb
* Free, Halogen Free/BFR Free and i
NXH40B120MNQ1SNG Datasheet (923.79 KB)
NXH40B120MNQ1SNG
923.79 KB
Three channel full sic.
Silicon Carbide (SiC) Module EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package Prod.
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