NXH40B120MNQ1SNG Three Channel Full SiC

ON Semiconductor

Description

Silicon Carbide (SiC) Module * EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package Prod.

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Datasheet Specifications

Part number: NXH40B120MNQ1SNG
Manufacturer: ON Semiconductor ↗
File Size: 923.79 KB
Datasheet: NXH40B120MNQ1SNG-ONSemiconductor.pdf
Description: Three Channel Full SiC

Features

* 1200 V 40 mW SiC MOSFETs
* Low Reverse Recovery and Fast Switching SiC Diodes
* 1200 V Bypass and Anti
* parallel Diodes
* Low Inductive Layout
* Solderable Pins
* Thermistor
* This Device is Pb
* Free, Halogen Free/BFR Free and i

Applications

* Solar Inverters
* Uninterruptable Power Supplies DATA SHEET www. onsemi. com PIM32, 71x37.4 (SOLDER PIN) CASE 180BQ MARKING DIAGRAM NXH40B120MNQ1SNG ATYYWW NXH40B120MNQ1SNG = Device Code G = Pb
* Free Package AT = Assembly & Test Site Code YYWW = Year and Work Week Co

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NXH40B120MNQ1SNG Three Channel Full SiC ON Semiconductor

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