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NXH40B120MNQ1SNG

Three Channel Full SiC

NXH40B120MNQ1SNG Features

* 1200 V 40 mW SiC MOSFETs

* Low Reverse Recovery and Fast Switching SiC Diodes

* 1200 V Bypass and Anti

* parallel Diodes

* Low Inductive Layout

* Solderable Pins

* Thermistor

* This Device is Pb

* Free, Halogen Free/BFR Free and i

NXH40B120MNQ1SNG Datasheet (923.79 KB)

Preview of NXH40B120MNQ1SNG PDF

Datasheet Details

Part number:

NXH40B120MNQ1SNG

Manufacturer:

ON Semiconductor ↗

File Size:

923.79 KB

Description:

Three channel full sic.
Silicon Carbide (SiC) Module

* EliteSiC, 40 mohm SiC M1 MOSFET, 1200 V + 40 A, 1200 V SiC Diode, Three Channel Full SiC Boost, Q1 Package Prod.

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NXH40B120MNQ1SNG Three Channel Full SiC ON Semiconductor

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