NXH3670UK Datasheet, Transceiver, NXP

NXH3670UK Features

• Transceiver
• Transceiver characteristics
    – 2.402 GHz to 2.480 GHz carrier frequency
    – Bluetooth Low Energy 1 Mbps and 2 Mbps PHY modes
    – 2 M

PDF File Details

Part number:

NXH3670UK

Manufacturer:

NXP ↗

File Size:

413.98kb

Download:

📄 Datasheet

Description:

Bluetooth low energy transceiver. The NXH3670UK constitutes a highly integrated, single chip ultra-low power 2.4 GHz wireless transceiver with embedded MCU, targeted

NXH3670UK Application

• Applications The main application target is gaming headsets, wireless headsets, and headphones. Thanks to its support for audio, control and data,

TAGS

NXH3670UK

NXP

📁 Related Datasheet

NXH350N100H4Q2F2P1G - Si/SiC Hybrid Module (ON Semiconductor)
DATA SHEET .onsemi. Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX.

NXH350N100H4Q2F2P1G-R - Si/SiC Hybrid Module (ON Semiconductor)
DATA SHEET .onsemi. Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX.

NXH350N100H4Q2F2S1G - Si/SiC Hybrid Module (ON Semiconductor)
DATA SHEET .onsemi. Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX.

NXH350N100H4Q2F2S1G-R - Si/SiC Hybrid Module (ON Semiconductor)
DATA SHEET .onsemi. Si/SiC Hybrid Module – EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F2P1G, NX.

NXH35C120L2C2S1G - TMPIM 35A CIB/CI Module (ON Semiconductor)
TMPIM 35 A CIB/CI Module Product Preview NXH35C120L2C2SG/S1G The NXH35C120L2C2SG is a transfer−molded power module containing a converter−inverter−br.

NXH35C120L2C2SG - TMPIM 35A CIB/CI Module (ON Semiconductor)
TMPIM 35 A CIB/CI Module Product Preview NXH35C120L2C2SG/S1G The NXH35C120L2C2SG is a transfer−molded power module containing a converter−inverter−br.

NXH003P120M3F2PTHG - SiC (ON Semiconductor)
Silicon Carbide (SiC) Module – EliteSiC, 3 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with HPS DBC NXH003P120M3F2PTHG The NXH.

NXH004P120M3F2PTNG - SiC (ON Semiconductor)
Silicon Carbide (SiC) Module – EliteSiC, 4 mohm SiC M3 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package with Si3N4 DBC NXH004P120M3F2PTNG The N.

NXH006P120MNF2PTG - SiC MOSFET (ON Semiconductor)
Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package NXH006P120MNF2PTG The NXH006P120MNF2 is.

NXH008P120M3F1PG - SiC MOSFET (ON Semiconductor)
.