NXH350N100H4Q2F2P1G-R

Si/SiC Hybrid Module

ON Semiconductor

NXH350N100H4Q2F2P1G-R Features

* Extremely Efficient Trench with Field Stop Technology

* Low Switching Loss Reduces System Power Dissipation

* Module Design Offers High Power Density

* Low Inductive Layout

* Low Package Height

* These Devices are Pb

* Free, Halogen Free/BFR Fr

NXH350N100H4Q2F2P1G-R Datasheet (2.73 MB)

NXH350N100H4Q2F2P1G-R Datasheet Preview — Preview of NXH350N100H4Q2F2P1G-R PDF

Datasheet Details

Part number:

NXH350N100H4Q2F2P1G-R

Manufacturer:

ON Semiconductor ↗

File Size:

2.73 MB

Description:

Si/sic hybrid module.
DATA SHEET www.onsemi.com Si/SiC Hybrid Module

* EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F.

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NXH350N100H4Q2F2P1G-R SiC Hybrid Module ON Semiconductor

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