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NXH350N100H4Q2F2P1G Si/SiC Hybrid Module

NXH350N100H4Q2F2P1G Description

DATA SHEET www.onsemi.com Si/SiC Hybrid Module * EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F.

NXH350N100H4Q2F2P1G Features

* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* These Devices are Pb
* Free, Halogen Free/BFR Fr

NXH350N100H4Q2F2P1G Applications

* Solar Inverters
* Uninterruptable Power Supplies Systems PACKAGE PICTURE Q2PACK INPC PRESS FIT PINS CASE 180BH Q2PACK INPC SOLDER PINS CASE 180BS MARKING DIAGRAM NXH350N100H4Q2F2P1G/S1G/S1G
* R/P1G
* R ATYYWW G = Pb
* Free Package AT = Assembly & Test Site Code Y

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SiC Hybrid Module ON Semiconductor
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