* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* These Devices are Pb
* Free, Halogen Free/BFR Fr
NXH350N100H4Q2F2S1G-R Datasheet (2.73 MB)
NXH350N100H4Q2F2S1G-R
2.73 MB
Si/sic hybrid module.
DATA SHEET www.onsemi.com Si/SiC Hybrid Module EliteSiC, I-Type NPC 1000 V, 350 A IGBT, 1200 V, 100 A SiC Diode, Q2 Package NXH350N100H4Q2F.
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