NXH350N100H4Q2F2S1G-R Features
* Extremely Efficient Trench with Field Stop Technology
* Low Switching Loss Reduces System Power Dissipation
* Module Design Offers High Power Density
* Low Inductive Layout
* Low Package Height
* These Devices are Pb
* Free, Halogen Free/BFR Fr
NXH350N100H4Q2F2P1G-ONSemiconductor.pdf
Datasheet Details
NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G
2.73 MB
Si/sic hybrid module.
This datasheet PDF includes multiple part numbers: NXH350N100H4Q2F2S1G-R, NXH350N100H4Q2F2P1G.
Please refer to the document for exact specifications by model.
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