SBE813 - Schottky Barrier Diode

ON Semiconductor

Datasheet Details

Small switching noise.
Low leakage current and high reliability due to highly reliable planar structure.
Ultrasmall package permitting applied sets to be small and slim Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature VRRM VRSM IO IFSM Tj Storage Temperature Tstg Conditions 50Hz sine wave, 1 cycle Rating.

📁 SBE813 Similar Datasheet

Other Datasheets by ON Semiconductor

Published: Jan 22, 2016 |