SBE818 - Schottky Barrier Diode

ON Semiconductor

Datasheet Details

Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting.
Small switching noise.
Low forward voltage (IF=2.0A, VF max=0.62V).
Low reverse current (VR=15V, IR max=7.5μA).
Ultrasmall package permitting applied sets to be small and slim (Mounting height 0.75mm) Speciﬁcations Absolute Maximum Ratings at Ta=25°C (Value per element) Parameter Symbol Conditions Repetitive Peak Reverse Voltage VRRM Nonrepetit.

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Published: Jan 22, 2016 |