SBE818 Datasheet - ON Semiconductor

SBE818 Schottky Barrier Diode

SBE818 Features

* Composite type device with 2 low IR SBD shoused in one package, facilitating high density mounting

* Small switching noise

* Low forward voltage (IF=2.0A, VF max=0.62V)

* Low reverse current (VR=15V, IR max=7.5μA)

* Ultrasmall package permitting applied sets

Datasheet Details

SBE818

452.88 KB

Schottky barrier diode.

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SBE818 Schottky Barrier Diode ON Semiconductor

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