SM12T1G Transient Voltage Suppressor Diode Array

ON Semiconductor

Description

DATA SHEET www.onsemi.com ESD Protection Diode Array Dual Common Anode SM05T1G Series These dual monolithic silicon surge protection diodes are desi.

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Datasheet Specifications

Part number: SM12T1G
Manufacturer: ON Semiconductor ↗
File Size: 194.55 KB
Datasheet: SM12T1G-ONSemiconductor.pdf
Description: Transient Voltage Suppressor Diode Array

Features

* SOT
* 23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration
* Working Peak Reverse Voltage Range
* 5.0 V to 36 V
* Peak Power
* 300 Watt (8/20 ms)
* Low Leakage
* 1.0 mA
* F

Applications

* requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines

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SM12T1G Transient Voltage Suppressor Diode Array ON Semiconductor

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