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SM12T1 - ESD Protection Diode Array

Key Features

  • SOT.
  • 23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration.
  • Working Peak Reverse Voltage Range.
  • 12 V.
  • Standard Zener Breakdown Voltage Range.
  • 13.3 V to 15.75 V.
  • Peak Power.
  • 300 Watt (8 X 20 ms).
  • Low Leakage.
  • Flammability Rating UL 94 V.
  • 0 Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion res.

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Datasheet Details

Part number SM12T1
Manufacturer onsemi
File Size 127.42 KB
Description ESD Protection Diode Array
Datasheet download datasheet SM12T1 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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ESD Protection Diode Array Dual Common Anode SM12T1 These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: • SOT−23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration • Working Peak Reverse Voltage Range − 12 V • Standard Zener Breakdown Voltage Range − 13.3 V to 15.