VN0610LL - FET Transistor
VN0610LL FET Transistor N Channel Enhancement MAXIMUM RATINGS Rating Drain Source Voltage Drain Gate Voltage (RGS = 1 MΩ) Gate Source Voltage Continuous Non repetitive (tp ≤ 50 μs) Drain Current Continuous Pulsed Total Power Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering
