MGY25N120 Insulated Gate Bipolar Transistor

Description

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MGY25N120/D Insulated Gate Bipolar Transistor N *Channel Enhancement.

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Datasheet Specifications

Part number: MGY25N120
Manufacturer: ON
File Size: 153.59 KB
Datasheet: MGY25N120_ONSemiconductor.pdf
Description: Insulated Gate Bipolar Transistor

Features

* ing the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P. O. B

Applications

* requiring a guaranteed short circuit withstand time. Fast switching characteristics result in efficient operation at high frequencies.
* Industry Standard High Power TO
* 264 Package (TO
* 3PBL) High Speed Eoff: 216 mJ/A typical at 125°C High Short C

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