* High DC Current Gain
* hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
* Curves to 100 A (Pulsed)
* Diode Protection to Rated IC
* Monolithic Construction with Built
* In Base
* Emitter Shunt Resistor
* Junction Temperature t
MJ11030
ON
116.12 KB
Complementary silicon darlington power transistors.
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP)
High-Current Complementary Silicon Power Transistors
High
*Current Complementary Silico.
📁 Related Datasheet
MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
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MJ11032 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
