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MJ11029

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

MJ11029 Features

* High DC Current Gain

* hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc

* Curves to 100 A (Pulsed)

* Diode Protection to Rated IC

* Monolithic Construction with Built

* In Base

* Emitter Shunt Resistor

* Junction Temperature t

MJ11029 Datasheet (116.12 KB)

Preview of MJ11029 PDF

Datasheet Details

Part number:

MJ11029

Manufacturer:

ON

File Size:

116.12 KB

Description:

Complementary silicon darlington power transistors.
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High

*Current Complementary Silico.

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MJ11029 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS ON

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