* High DC Current Gain
* hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
* Curves to 100 A (Pulsed)
* Diode Protection to Rated IC
* Monolithic Construction with Built
* In Base
* Emitter Shunt Resistor
* Junction Temperature t
MJ11032
ON
116.12 KB
Complementary silicon darlington power transistors.
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP)
High-Current Complementary Silicon Power Transistors
High
*Current Complementary Silico.
📁 Related Datasheet
MJ11030 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
MJ11030 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (ON)
MJ11030 COMPLEMENTARY DARLINGTON POWER TRANSISTOR (Seme LAB)
MJ11030 Power Transistor (DIGITRON)
MJ11030 NPN Transistor (INCHANGE)
MJ11031 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (Motorola)
MJ11031 COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS (ON)
MJ11031 COMPLEMENTARY DARLINGTON POWER TRANSISTOR (Seme LAB)
MJ11031 Power Transistor (DIGITRON)
MJ11031 PNP Transistor (INCHANGE)
