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MJ15001 - Complementary Silicon Power Transistors

Features

  • High Safe Operating Area.
  • For Low Distortion Complementary Designs.
  • High DC Current Gain.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number MJ15001
Manufacturer ON
File Size 106.89 KB
Description Complementary Silicon Power Transistors
Datasheet download datasheet MJ15001 Datasheet
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MJ15001 (NPN), MJ15002 (PNP) Complementary Silicon Power Transistors The MJ15001 and MJ15002 are power transistors designed for high power audio, disk head positioners and other linear applications. Features • High Safe Operating Area • For Low Distortion Complementary Designs • High DC Current Gain • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Base Current − Continuous Emitter Current − Continuous Total Power Dissipation @ TC = 25°C Derate above 25°C VCEO VCBO VEBO IC IB IE PD 140 Vdc 140 Vdc 5 Vdc 15 Adc 5 Adc 20 Adc 200 W 1.
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