MMBT3416LT3 Datasheet - ON

MMBT3416LT3 General Purpose Amplifier(NPN Silicon)

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3416LT3/D General Purpose Amplifier NPN Silicon COLLECTOR 3 1 BASE MMBT3416LT3 3 1 2 EMITTER 2 CASE 318 08, STYLE 6 SOT 23 (TO 236AB) MAXIMUM RATINGS Rating Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VEBO IC Value 40 4.0 100 Unit Vdc Vdc mAdc THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR 5 B.

MMBT3416LT3 Features

* a solder reflow process. 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm SOT

* 23 SOT

* 23 POWER DISSIPATION The power dissipation of the SOT

* 23 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for m

MMBT3416LT3 Datasheet (297.04 KB)