MMBT3640LT1 Datasheet - Motorola

MMBT3640LT1 Switching Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3640LT1/D Switching Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3640LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 12 12 4.0 80 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 08, STYLE 6 SOT .

MMBT3640LT1 Features

* °C

* 25°C 556°C/W = 225 milliwatts The 556°C/W for the SOT

* 23 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 225 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT

MMBT3640LT1_MotorolaInc.pdf