* shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.
* After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temper
MMBT3906LT1 Datasheet (221.88 KB)
MMBT3906LT1
Motorola
221.88 KB
General purpose transistor.
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 .
📁 Related Datasheet
MMBT3906LT1 PNP Transistor (Tuofeng Semiconductor)
MMBT3906LT1 TRANSISTOR (WEJ)
MMBT3906LT1 PNP Transistor (TGS)
MMBT3906LT1G PNP Transistor (ON Semiconductor)
MMBT3906LT3G PNP Transistor (ON Semiconductor)
MMBT3906L PNP Small Signal Transistor (Taiwan Semiconductor)
MMBT3906L PNP Silicon Transistor (ON Semiconductor)
MMBT3906LP 40V PNP SMALL SIGNAL TRANSISTOR (Diodes)
MMBT3906 40V PNP SMALL SIGNAL TRANSISTOR (Diodes)
MMBT3906 PNP Transistor (CITC)
