MMBT3906LT1 Datasheet (Motorola) - General Purpose Transistor

MMBT3906LT1, General Purpose Transistor

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT3906LT1/D General Purpose Transistor PNP Silicon 1 BASE COLLECTOR 3 MMBT3906LT1 Motorola Preferred Device MAXIMUM RATINGS Rating Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Symbol VCEO VCBO VEBO IC Value 40 40 5.0 200 2 EMITTER 1 3 Unit Vdc Vdc Vdc mAdc 2 CASE 318 08, STYLE 6 SOT

MMBT3906LT1 Features

* shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less.

* After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temper