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MMBT3906WT1 - General Purpose Transistor

MMBT3906WT1 Description

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document MMBT3904WT1/D General Purpose Transistors NPN and PNP Silicon These transistors are desig.

MMBT3906WT1 Features

* 0 0.2 0 MMBT3904WT1 VBE(sat) @ IC/IB =10 COEFFICIENT (mV/ °C) 1.0 MMBT3904WT1 0.5 +25°C TO +125°C qVC FOR VCE(sat) 0
* 0.5
* 55°C TO +25°C
* 1.0 +25°C TO +125°C
* 1.5
* 2.0
* 55°C TO +25°C qVB FOR VBE(sat) 1.0 2.0 5.0 10 20 50 100 200 0 20

MMBT3906WT1 Applications

* They are housed in the SOT
* 323/SC
* 70 which is designed for low power surface mount applications. NPN MMBT3904WT1 PNP MMBT3906WT1 GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT MAXIMUM RATINGS Rating Collector
* Emitter Voltage Collector
* Base Voltage Emitter

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Datasheet Details

Part number
MMBT3906WT1
Manufacturer
Motorola
File Size
423.22 KB
Datasheet
MMBT3906WT1_MotorolaInc.pdf
Description
General Purpose Transistor

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