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20N60A4D N-Channel IGBT

20N60A4D Description

SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600 V HGTG20N60A4D The HGTG20N60A4D is a MOS gated high voltage switching device combini.

20N60A4D Features

* of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on
* state conduction loss of a bipolar transistor. The much lower on
* state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is the development type TA49339. Th

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N-Channel IGBT ON Semiconductor
ON Semiconductor 20N60A4D-like datasheet