4N35M - Phototransistor Optocouplers

ON Semiconductor

4N35M Datasheet Preview — Preview of 4N35M PDF

Datasheet Details

Part number	4N35M
Manufacturer	ON Semiconductor ↗
File Size	328.95 KB
Description	Phototransistor Optocouplers
Datasheet	4N35M-ONSemiconductor.pdf

4N35M Product details

Description

The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a standard plastic 6 pin dual in line package.

Features

Minimum Current Transfer Ratio at IF = 10 mA, VCE = 10 V:.
10% for 4N27M and 4N28M.
20% for 4N25M and 4N26M.
100% for 4N35M and 4N36M and 4N37M.
Safety and Regulatory Approvals:.
UL1577, 4,170 VACRMS for 1 Minute.
DIN.
EN/IEC60747.
5.
5, 850 V Peak Working Insulation Voltage.

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Other Datasheets by ON Semiconductor

4N36M - Phototransistor Optocouplers
4N37M - Phototransistor Optocouplers
4N38M - 6-Pin DIP High Voltage Phototransistor Optocouplers

Published: Dec 25, 2021 |