FDM3622 - N-Channel MOSFET

ON Semiconductor

FDM3622 Datasheet Preview — Preview of FDM3622 PDF

Datasheet Details

Part number	FDM3622
Manufacturer	ON Semiconductor ↗
File Size	163.71 KB
Description	N-Channel MOSFET
Datasheet	FDM3622-ONSemiconductor.pdf

FDM3622 Product details

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 60 mW at VGS = 10 V, ID = 4.4 A.
Max rDS(on) = 80 mW at VGS = 6.0 V, ID = 3.8 A.
Low Miller Charge.
Low QRR Body Diode.
Optimized efficiency at high frequencies.
UIS Capability (Single Pulse and Repetitive Pulse).
This Device is Pb.
Free, Halide Free and is RoHS Compliant MOSFET.

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Published: Dec 20, 2023 |