NDUL09N150C - Power MOSFET

ON Semiconductor

Datasheet Details

Low On-Resistance.
Ultra High Voltage.
Pb-Free and RoHS Compliance.
High Speed Switching.
100% Avalanche Tested Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (DC) Limited by Package Drain Current (Pulse) PW  10s, duty cycle  1% Symbol VDSS VGSS ID IDL IDP Power Dissipation Junction Temperature Tc=25C PD Tj Storage Temperature Tstg Source Current (Body Diode) Av.

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Published: Jan 15, 2016 |