F1047A Datasheet - Osram Opto Semiconductors

F1047A Infrared Emitting Diode Chip

Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, top side cathode connection Infrarot emittierender Chip, Oberseite Kathodenanschluss, Oberfläche aufgerauht. Infrared emitting die, top side cathode connection, surface frosted 2003-04-11 1 www.DataSheet4U.com F 1047.

www.DataSheet4U.com GaAlAs-Infrarot-Lumineszenzdiode (880 nm) GaAlAs Infrared Emitting Diode (880 nm) F 1047A F 1047B Vorläufige Daten / Preliminary Data Wesentliche Merkmale Typ. Gesamtleistung: 22 mW @ 100 mA im TOPLED® Gehäuse Chipgröße 300 x 300 µm2 GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an Si-Fotoempfänger Vorderseitenmetallisierung: Aluminium Rückse.

F1047A Features

* Typ. total radiant power: 22 mW @ 100 mA in TOPLED® package.

* Chipsize: 300 x 300 µm²

* Very highly efficient GaAlAs LED

* High reliability

* High pulse handling capability

* Good spectral match to silicon photodetectors

* Frontside metalliz

F1047A Datasheet (99.61 KB)

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Datasheet Details

Part number:

F1047A

Manufacturer:

Osram Opto Semiconductors

File Size:

99.61 KB

Description:

Infrared emitting diode chip.

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F1047A Infrared Emitting Diode Chip Osram Opto Semiconductors

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