Description
www.DataSheet4U.com GaAlAs-Infrarot-Lumineszenzdiode (880 nm) GaAlAs Infrared Emitting Diode (880 nm) F 1047A F 1047B Vorläufige Daten / Preliminary.
Infrarot emittierender Chip, Oberseite Kathodenanschluss Infrared emitting die, top side cathode connection Infrarot emittierender Chip, Oberseite Kat.
Features
* Typ. total radiant power: 22 mW @ 100 mA in TOPLED® package.
* Chipsize: 300 x 300 µm²
* Very highly efficient GaAlAs LED
* High reliability
* High pulse handling capability
* Good spectral match to silicon photodetectors
* Frontside metalliz
Applications
* IR remote control for hifi and TV sets, video tape recorder, dimmers
* Remote control for steady and varying intensity
* Light-reflection switches (max. 500 kHz)
* Sensor technology
* Discrete optocouplers
Typ Type F 1047A F 1047B
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