* Typ. total radiant power: 22 mW @ 100 mA in TOPLED® package.
* Chipsize: 300 x 300 µm²
* Very highly efficient GaAlAs LED
* High reliability
* High pulse handling capability
* Good spectral match to silicon photodetectors
* Frontside metalliz
F1047B
Osram Opto Semiconductors
99.61 KB
Infrared emitting diode chip.
www.DataSheet4U.com GaAlAs-Infrarot-Lumineszenzdiode (880 nm) GaAlAs Infrared Emitting Diode (880 nm) F 1047A F 1047B Vorläufige Daten / Preliminary.
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