10N50TF Datasheet, mosfet equivalent, PINGWEI

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10N50 - N-Channel MOSFET (INCHANGE)
isc N-Channel MOSFET Transistor INCHANGE Semiconductor 10N50 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fa.

10N50K-MT - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 10N50K-MT 10A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N50K-MT is an N-channel mode power MOSFET using UTC’.

10N03L - IPP10N03L (Infineon Technologies AG)
IPP10N03L IPB10N03L OptiMOS® Buck converter series Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 30 8.9 73 P- TO.

10N100-FL - 1000V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N100-FL 10A, 1000V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines adv.

10N12 - N-Channel MOSFET (INCHANGE)
isc N-Channel Mosfet Transistor ·FEATURES ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 120V(Min) ·Static Drain-Source On-Resistance.

10N120BND - HGTG10N120BND (Fairchild Semiconductor)
Data Sheet HGTG10N120BND December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG10N120BND is a Non-Punch Thr.

10N15 - N-CHANNEL POWER MOSFET (Unisonic Technologies)
UNISONIC TECHNOLOGIES CO., LTD 10N15 Preliminary 10A, 150V, 0.3Ω, N-CHANNEL POWER MOSFETS 1  DESCRIPTION The UTC 10N15 is an N-channel enhanceme.

10N20 - FQB10N20 (Fairchild Semiconductor)
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10N20C - FQP10N20C (Fairchild Semiconductor)
www..com FQP10N20C/FQPF10N20C QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power .

10N30 - 300V N-CHANNEL POWER MOSFET (UTC)
UNISONIC TECHNOLOGIES CO., LTD 10N30 Power MOSFET 10A, 300V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N30 is an N-channel mode power MOSFET usi.