P3M171K2K3 N-Channel Enhancement Mode SiC MOS

P3M171K2K3 Description

P3M171K2K3 SiC MOS N-Channel Enhancement Mode VRRM = 1700 V ID =6 A ID (100℃) = 4 A RDS(on) =1 Ω SiC MOS P3M171K2K3 N-Channel Enhancement M.

P3M171K2K3 Features

* High Blocking Voltage with Low On-Resistance
* High-Frequency Operation
* Ultra-Small Qgd
* 100% UIS tested 3 2 1 D Benefits
* Improve System Efficiency
* Increase Power Density
* Reduce Heat Sink Requirements

P3M171K2K3 Applications

* Solar Inverters
* EV Battery Chargers
* High Voltage DC/DC Converters
* Switch Mode Power Supplies TO-247-3 Gate 1 Drain 2 Source 3 Order Information Part Number P3M171K2K3 Package TO-247-3 Marking P3M171K2K3
* www. pnjsemi. com Page 1 of 12 Ver. 1.0 Jan. 2022 P3M171

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Datasheet Details

Part number: P3M171K2K3
Manufacturer: PN JunctiON Semiconductor ↗
File Size: 1.17 MB
Datasheet: P3M171K2K3-PNJunctionSemiconductor.pdf
Description: N-Channel Enhancement Mode SiC MOS

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N-Channel Enhancement Mode SiC MOS PN Junction Semiconductor

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