P3M171K2K3 - N-Channel Enhancement Mode SiC MOS
P3M171K2K3 Features
* High Blocking Voltage with Low On-Resistance
* High-Frequency Operation
* Ultra-Small Qgd
* 100% UIS tested 3 2 1 D Benefits
* Improve System Efficiency
* Increase Power Density
* Reduce Heat Sink Requirements
* Reduction of System Cost Applications
* Solar In
