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GX3441

RF POWER GAN TRANSISTOR

GX3441 General Description

Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this d.

GX3441 Datasheet (50.49 KB)

Preview of GX3441 PDF

Datasheet Details

Part number:

GX3441

Manufacturer:

POLYFET RF DEVICES

File Size:

50.49 KB

Description:

Rf power gan transistor.

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