Datasheet Details
- Part number
- GX3441
- Manufacturer
- POLYFET RF DEVICES
- File Size
- 50.49 KB
- Datasheet
- GX3441-POLYFETRFDEVICES.pdf
- Description
- RF POWER GAN TRANSISTOR
GX3441 Description
polyfet rf devices GX3441 General .
Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.
GX3441 Applications
* The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range. RF POWER GAN TRANSISTOR
80.0 Watts Single Ended
Package Style GX HIGH EFFICIENCY, LINEAR
HIGH GAIN,
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