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GX3441 Datasheet - POLYFET RF DEVICES

GX3441 - RF POWER GAN TRANSISTOR

Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.

The use of a thermally enhanced package enables this device to have superior heat dissipation properties.

The high drain break down voltage permits this d

GX3441-POLYFETRFDEVICES.pdf

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Datasheet Details

Part number:

GX3441

Manufacturer:

POLYFET RF DEVICES

File Size:

50.49 KB

Description:

Rf power gan transistor.

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