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GX3441 Datasheet - POLYFET RF DEVICES

GX3441 RF POWER GAN TRANSISTOR

Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this d.

GX3441-POLYFETRFDEVICES.pdf

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Datasheet Details

Part number:

GX3441

Manufacturer:

POLYFET RF DEVICES

File Size:

50.49 KB

Description:

Rf power gan transistor.

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GX3441 GX3441 POWER GAN TRANSISTOR POLYFET RF DEVICES

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