GX3442 Datasheet - POLYFET RF DEVICES

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GX3442 RF POWER GAN TRANSISTOR

polyfet rf devices GX3442 General .
Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications.

GX3442-POLYFETRFDEVICES.pdf

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Datasheet Details

Part number:

GX3442

Manufacturer:

POLYFET RF DEVICES

File Size:

50.58 KB

Description:

RF POWER GAN TRANSISTOR

Applications

* The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this device to operate over a wide voltage range. RF POWER GAN TRANSISTOR 120.0 Watts Single Ended Package Style GX HIGH EFFICIENCY, LINEAR HIGH GAIN,

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GX3442 POWER GAN TRANSISTOR POLYFET RF DEVICES

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