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GX3442

RF POWER GAN TRANSISTOR

GX3442 General Description

Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for both broadband and narrow band applications. The use of a thermally enhanced package enables this device to have superior heat dissipation properties. The high drain break down voltage permits this d.

GX3442 Datasheet (50.58 KB)

Preview of GX3442 PDF

Datasheet Details

Part number:

GX3442

Manufacturer:

POLYFET RF DEVICES

File Size:

50.58 KB

Description:

Rf power gan transistor.

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