GAN Datasheet | Specifications & PDF Download

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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ACPL-P346/ACPL-W346 2.5-Amp Output Current Power, GaN and SiC MOSFET Gate Drive Optocoupler with Rail-to-Rail Output Data Sheet Description The Broa

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ACPL-P349 and ACPL-W349 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6 Data Sheet Description The Broadcom®

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Top-side cooled configuration • R

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QPA3230 GaAs/GaN Power Doubler Hybrid 45MHz to 1218MHz RFMD + TriQuint = Qorvo QPA3230 The QPA3230 is a Hybrid Power Doubler amplifier module. The p

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CGH35060F2/P2 60 W, 3.1 - 3.5 GHz, 28 V, GaN HEMT Description Wolfspeed’s CGH35060F2/P2 is a gallium nitride (GaN) high electron mobility transistor (

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CGHV31500F1 2.7 – 3.1 GHz, 500 W GaN HPA Description The CGHV31500F1 is a 500W packaged transistor fully matched to 50 ohms at both input and output p

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Data Sheet CR 2032 Lithium Manganese Dioxide Type Number …………………….……… 6032 Designation IEC ………………..……….. CR 2032 System ……………………………..…….. Li-Mangane

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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polyfet rf devices GX3442 General Description Polyfet's GAN (on SiC) HEMT power transistors contain no internal matching; making them suitable for b

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CGHV1F025S 25 W, DC - 15 GHz, 40 V, GaN HEMT Description The CGHV1F025S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT

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Data Sheet ADPA1116 0.3 GHz to 6 GHz, 39.5 dBm, GaN Power Amplifier FEATURES ► Internally matched, 0.3 GHz to 6 GHz, 39.5 dBm, GaN power amplifier ►

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CG2H30070F 70 W, DC - 4.0 GHz, 28 V, RF Power GaN HEMT Description The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobilit

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