GAN Datasheet | Specifications & PDF Download

TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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10/100BASE-T SINGLE PORT SURFACE MOUNT MAGNETICS With Various Turns Ratios RoHS-5 peak reflow temperature rating 235°C RoHS-6 peak reflow temperature

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Features • 600V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operation

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TIANBO GANGLIAN ELECTRONICS HJR-3FF HJR-3FF SPECIFICATION FILE NUMBER: P-08KA501A DATE: 2001/11/02 ■ Features 10A switching capability Small footpr

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T echnical Specification CR2032 Lithium Manganese Dioxide (Li-MnO2) Coin Batteries Dimensions(mm) ENERGY VERY ENDURE 1.TEMPERATURE CHARACTERISTICS

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Features • 600V Fast Field Stop Trench Technology • Low Switching Loss for a Wide Temperature Range • Positive Temperature Coefficient • Easy Parallel

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www.DataSheet4U.com NINGBO TIANBO GANGLIAN ELECTRONICS OC., LTD HJR4102 SPECIFICATION FILE NUMBER：T810S-T002A DATE：2004/06/25 ■ CONTACT DATA Contac

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GS61008T Top-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Top-side cooled configuration • R

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PCF7930/31/35 Memory organisation Memory structure Control memory flags of block 0 • Password (Bytes 0..6) The password is 56 bits long. If the pas

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NV6148C 700V Advanced GaNSlim Power IC NV6148C 1. Features • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate

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Product Folder Order Now Technical Documents Tools & Software Support & Community LMG1020 SNOSD45B – FEBRUARY 2018 – REVISED OCTOBER 2018 LMG1020

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Li/Mn0 2 CR123A Lithium/Manganese Dioxide Battery Key Features ▪ Industry Highest Cell Capacity & High Energy ▪ High voltage response, stable during

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Genuine Aircraft Hardware Co. All original Text, Tables, and Drawings are Copyright 1994-2006 reproduction by permission only. MS21063 Nut, Self-loc

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GS61008P Bottom-side cooled 100 V E-mode GaN transistor Datasheet Features • 100 V enhancement mode power transistor • Bottom-side cooled configurati

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NV6144C 700V Advanced GaNSlim Power IC NV6144C 1. Feature • Integrated gate drive • 3.3V/5V/15V PWM logic input compatible • Programmable accurate G

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JW1568K 650V Half-Bridge GaN with Gate Driver Preliminary Specifications Subject to Change without Notice DESCRIPTION FEATURES The JW1568K is an a

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PCF7930/31/35 Memory organisation Memory structure Control memory flags of block 0 • Password (Bytes 0..6) The password is 56 bits long. If the pas

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